Other Parts Discussed in Thread: CSD18531Q5A
Hi,
I have a question about how to calculate IDRIVE on the EVM.
In the data sheet of FET(CSD18531Q5A) which is installed, the gate charge is specified as 18 nC, and the rise time is specified as 7.8 ns.
Calculating with the calculation formula(IDRIVE > Q / RT) described in the data sheet will result in IDRIVE > 2.3A.
Perhaps I believe that the rise time is not appropriate and I think we should set a longer time.
Although "desired rise time" is described in the data sheet, how should we set the rise time?
Best Regards,
HM