Other Parts Discussed in Thread: LM5008A
Hi,
in my master thesis I want to parallelize two Mosfets (FDBL0200N100) with a total gate charge of 266nC (each 133nC for worst case) at 30kHz in a 48V 1.5kW three phase inverter. According to the datasheet the maximum Qg may be 278nC (25mA > 3 * Qg * ƒPWM). The DRV8353R is configured in dual supply with +15V at VM. In order to decrease switching loss I want to strengthen the IDRIVE and supply the following from internal LM5008A.
www.diodes.com/.../ZXGD3006E6Q.pdf
The idea is to relive DRV8353R gate drive circuit and reduce turn on time. I'm a little bit worried auf gate signal length of 60mm each. 
Please confirm if this might work.
Thank you very much,
Stephan
