Hello,
I'm wondering how the internal low-side FETs of DRV8873S-Q1 are protected when OUT1 or OUT2 is shorted to battery.
- Are currents running through the low-side FETs actually monitored? Or, will its overcurrent condition be monitored and protected indirectly by such means as thermal shutdown feature?
- Is there any restriction on the ramp rate of rising current running through the low-side FET to detect the condition as overcurrent?
Best regards,
Shinichi Yokota