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DRV8432: MOSFET parameters of the DRV8432

Franz Braun
Prodigy 130 points

Part Number: DRV8432

Dear TI Team,

I try to create and simulate a model of the MOSFET used in the DRV8432 to roughly calculate the switching losses, but the manual has no information about the capacities. Measuring the capacities turned out to be difficult because the electrodes of the MOSFETs are not exposed.

So my questions are: Is there possibly a MOSFET whose data sheet gives approximate parameters? (An approximate estimate is sufficient for my purposes.)

Or can I estimate the parameters from the rise and fall times given in the data sheet?

Thank you in advance!

Franz Braun




								


				
				

				
			

		

			
						
									
                			    			                        
						
						
			
			
						
			                        
			
			
				
			  
			

			     
			

		


				    			

						
















	

	

					
    
	
    





		
	
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                          TI__Guru
                        56650 points
                      
    
                          
                   		
		
    
					
    Franz,
    

    There is no internal FET's gate capacitor and gate resistor parameter that can be found in Datasheet or the characterization data.
    

    To estimate the switching loss, please measure the switching node turn-on time: trising and turn-off time: tfalling.
    

    The HIFET turn-on switching loss on each switching cycle is roughly equal Vin*load current * trising; the turn-off loss is about Vin* load current * tfalling.
    
			
    

		
		
		
		
	
    
	
    
		
    
			
		
    
	
    

	            
                 	
	
    
				
		                
                
                
                
                
                
                
        		
		
				
    
			
		
    
		
		 
		
		
     
    
	
    

    
			
    
			
    
		
    

		
    
	
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