Hi,
There are Figure 70/71 on the datasheet as below;
How much are tDRIVE and tDEAD set on this time?
Best Regards,
Kuramochi
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Hi,
There are Figure 70/71 on the datasheet as below;
How much are tDRIVE and tDEAD set on this time?
Best Regards,
Kuramochi
Hey Kuramochi,
It's difficult to tell the exact value of TDRIVE from just the waveforms. The only thing we can assume is it was set to some period longer than the rise and fall times.
The delay between switching from the low-side to the high-side MOSFET (or vice-versa) is the dead time (TDEAD). For this waveform it looks like TDEAD is set to 100ns.
You might have noticed that the dead time in Figure 71 is longer than the dead time in Figure 70. This is because in the case where the gate driver is transitioning from high-side to low-side there's an additional delay of 100-200ns introduced into the dead time. The reason for this additional delay is described in the datasheet section 8.3.1.4.2 TDRIVE: MOSTFET Gate Drive Control.
Alongside the datasheet, you might find this application report (Understanding Smart Gate Drive) useful. It explains the IDRIVE architecture and smart gate driver parameters in more detail.
Regards,
Paul
Paul-san,
Thank you for your reply.
I have an additional question.
Do you know that which is measured device DRV8350S or DRV8350H?
Best Regards,
Kuramochi
Kuramochi-san,
I don't know which device specifically was measured. However, both the DRV8350S and DRV8350H operate IDRIVE in the same way.
The only difference between these two devices is the hardware device (DRV8350H) has fewer configurable options for IDRIVE. For example, the SPI device (DRV8350S) has 4 configurable options for TDRIVE whereas for the hardware device, TDRIVE is set to 4000ns. All of these configurable options are described in the datasheet.
Regards,
Paul