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TPS27S100: Reverse Protection Diode (Figure 31 in DS)

Part Number: TPS27S100

The DS (Figure 31 and 32) shows a Diode and/or GND Network (Diode + parallel resistor between GND and device GND) to protect against reverse polarity (current flowing backward through device)

I can't find any recommendations for the diode...apart from some mentions of the GND network diode current limit...could you give an example diode that would work for the following?

Vin = 24V

Iout = 2A

ILIM = 470Ω

Darren

  • Hi Darren,

    The diode should be able to block the voltage in case of reverse current. The FET is rated for max of 48V, so a diode of at least 48V blocking voltage capability is needed. Also the lower the forward voltage drop, the better. The diode voltage drop will cause a ground shift between IC ground and digital ground of microcontroller. 0.6-0.7V is fine.

    A diode used in our EVM is BAS21-7-F for your reference.

    Please let us know if you have additional questions.

    Regards,

    Yichi