I have questions about for using TPS51200DRCT.
1.Condition
1) Device : TPS51200DRCT
2) Purpose of use: VTT0.6V power supply for DDR4 memory, VREF0.6V power supply generation
16-bit width DDR4 memory x4pcs
16-bit width DDR4 memory x2pcs
The above device 1pcs is used for each of the 2 ch memory banks.
DDR4 memory transfer speed: DDR4-2133
2.Question
1) Even if I look at the data sheet, I can only find application examples up to DDR3.
Is there an application example for DDR4?
2) We plan to use the input voltage of the VIN terminal at 3.0 V or 3.15 V.
The explanation column for the input pin is 2.5 V or 3.3 V,
Is there any problem for supplying 3.0 V or 3.15 V?
Is this voltage stability related to the stability (output fluctuation) of VO output and REFOUT output?
Moreover, the input current (Iin) is Max.1mA. Does this change even if the voltage changes?
3) How much current capacity should be expected for the 1.2 V power supply with VLDOIN input?
4) About the PGOOD terminal, Is it okay to think that the maximum power supply for pulling up this terminal is 6.5V?
Also, is it okay to pull up the PGOOD terminal to a 3.3V power supply while supplying 3.0V to the VIN terminal?
5) Does the EN pin always have to be lower than the VIN voltage?
When supplying 3.0 V to the VIN terminal, does it mean that a 3.3V level signal should not be added to the EN terminal?