Hello,
Two questions regarding BQ40Z50-R3 for rechargeable BMS system where PTC protection is enabled and FUSE is disabled:
1- How to disable FUSE bin from BQ40z50-R3 Data Memory so it does not activated when PTC protection is activated?
In BQ40z50 > Data Memory > Settings > PF Fuse C & PF Enabled PF C,
I only enabled the PTC in PF Enabled PF C
And I ensured that it is disabled in PF Fuse C
and FUSE_EN also disabled
for more Data Memory details check BQ40z50R3.gg.csv
2- How to disable the FUSE bin by hardware while having minimal current?
It was suggested in https://training.ti.com/troubleshooting-common-multi-cell-gauge-issues
to connect the FUSE bin directly to VSS in case of disabling the FUSE. But when I test this suggestion, by connecting it to GND directly as shown in next figure. The circuit start to consume 4 mA when PTC protection trips and FUSE bin is activated. So can I use different value of R1 to reduce the current? And what the suggested value?
(Similar circuit which we used in the BMS design)