Hello Guys,
Good day.
Our customer is looking for a high power depletion mode N channel MOSFET with extremely high carrier mobility and low bandgap. Ideally the semiconductor would be InAs, but GaAs may also work. Could you help advise a suitable part number?
Additional information of his requirements:
"Carrier mobility is by far the most important requirement. MOSFET made with InAs would be ideal for my needs because of the very high carrier mobility which is 19200 cm^2/V/s for this material. In comparison GaN has a mobility of 440 cm^2/V/s. Can you confirm this data for your transistors? My request may seems strange because of my unusual use of the transistor. They will be used not as amplifiers but as magnetic field sensors operating around -55C near the depletion mode switching point. The end product will be energy generation. If you have anything off the shelf (N channel depletion mode) with extremely large mobility (>8000cm^2/V/s), please let me know."
Thanks and regards,
Art
