We have a BQ24610 design where I believe we are seeing mosfet shoot-through. It is mostly similar to the typical application circuit in the datasheet, 12V input, 4.2V@2A output. The charger is functional, but we are getting very high radiated energy in our EMI scans. We used a Fairchild FDMS7700S (dual N with schottky) which has a fairly high input capacitance/low rds(on) as we used it in a different regulator on the same board. In the process of debugging we added gate series resistors and started to blow out the mosfets. Looking at the gate drives on a working board there appears to be some overlap.
My question is, are there any selection guidelines about how much MOSFET input capacitance is too much, assuming the BQ24610 is driving the FET gates directly with no series R?
