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Hello guys,
One of customers is evaluating LM5155 using LM5155 SEPIC EVM.
But they changed several parts on the EVM from the original parts as the follows to adjust for their spec.
TI EVM original Their parts number
D1 PMEG060V100EPDZ -> RF05VAM1S (Rohm)
Q1 NVMFS5C645NLWFAFT1G -> NVTFS010N10MCL (On semi)
L1 7448700015 -> 744870151 (150uH, Wurth Elektronik)
R9 51.0 kohm -> 47k ohm (For FB)
R11 4.64 kohm -> 1k ohm (For FB)
R10 9.09 kohm -> 62k ohm (for RT)
The efficiency of the EVM they changed several parts are the follows at Vin=16V, Vo=48V, Io=10mA to 80mA.
Io (mA) Efficiency (%)
10 41
20 54
40 69
60 76
80 79
The following is TI LM5155/56 SEPIC Controller Quick Start Calculator they input.
LM5155_56_Excel_Quickstart_Calculator_for_SEPIC_350kHz.pdf
The efficiency in the file above are the follows at same Vin Vo, Io conditions.
Io (mA) Efficiency (%)
10 60
20 73
40 83
60 87
80 89
Do you think what is the cause this difference in efficiency?
Is there something wrong with the input data to the calculator?
Also they have a question as the follow. Could I ask you as a additional?
Reverse recovery charge of Schottky Diode(QRR) is needed to input to the calculator.
But QRR parameter is not defined in the diode datasheet they use.
What value should be input to the calculator?
Is there any calculated method for QRR using other parameters? For example, using reverse recovery time(trr) ?
Could you please give me your reply for them?
Best regards,
Kazuya.
Hello Kazuya,
Thanks for reaching out. Let me share here some comments with you:
Please let me know if I can help you furthermore.
Kind regards,
EM
Hello EM,
Thank you very much for your reply.
I will check the customer efficiency measurement environment whether it is similar with the best environment you said or not.
Could I ask you several additional questions?
Q1. Does this calculator have a field for entering the DCR of inductor?
Q2. If Q1 answer is no, is their any way to reflect RDC parameter of inductor in the efficiency calculation?
Q3. Are only MOSFET parameters and Diode parameters used for the efficiency calculation?
Thank you again and best regards,
Kazuya.
Hello Kazuya,
Thanks for your feedback. The calculator does not have a field to enter the DCR of the inductor, but you can calculate the power dissipated on the DCR in this way: R_dc * I^2 = Ploss , where R_dc is the DCR resistance of your inductor and I is the rms value of the current in the inductor, in this way you obtain the power loss on the DCR of the inductor. About your third question: I cannot unlock this Excel file unfortunately, but please keep in mind that in general efficiency is not only affected by diode and FET but also many other parameters (e.g. layout, switching frequency, lab setup etc.) . You might want to take a look at page 28 of the datasheet to see an example of the efficiency estimation for a boost (but most of these info apply to a SEPIC too).
Kind regards,
EM
Hello EM,
Thank you very much for your reply.
Your reply is very helpful for the customer and me.
Thank you again and best regards,
Kazuya.