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LM5114: Output high glitch from gate driver

Part Number: LM5114


Hi, 

We are currently investigating the failure of a class E inverter which uses the LM5114 for gate driving. The data that we've captured in testing so far indicates that the LM5114 is producing high output pulses even when the input is low. This glitch seems correlated with the failure of the HEMTs. 

The oscillogram below was captured during a destructive test of an inverter. The green trace is the input to the gate driver, the blue trace is the LM5114 output and the pink trace is the gate. There is a 4.7 ohm gate resistor between the outputs and the gate. Yellow is the drain.

It can be seen that the output of the LM5114 is pulling high, turning on the HEMT, once when the supply voltage drops and twice when the supply voltage is higher. 

There have been pretty high (22V) transients on the gate driver's supply rail at this point in the failure, so erratic behavior is not entirely unexpected. 

Also:

A few hundred milliseconds after the first event, another transient was observed from the same gate driver. At this point the gate resistor is destroyed so the gate does not track the driver. 

What would be nice to know now are:

1) Whether this is a known behavior of the part when subjected to conditions outside of the absolute maximum ratings, or otherwise.

2) If not, whether this behavior be explained with the die-level understanding of the part that TI possesses.

3) What the actual cause of the glitch is, and ideally how to reliably reproduce it on the bench. 

4) In the case that the failure mode is not understood, what tests we might be able to perform in order to find out more.

Any help will be appreciated. If any data is needed to contextualize the failure, let me know and I will try to provide it. 

Thanks, 

Tony

  • Hi Tony,

    Thanks for reaching out!

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    1)  If the P_OUT pin of the driver is going a diode drop (0.3V) above the supplied VDD, there will be conduction through the body-diode of the P-FET.  If the power going through the body diode of the MOSFET output structure of the gate driver is too great, this can cause damage to the device and ruin it.  This can also result in noise from the output being conducted onto the VDD rail of the device; which can move the VDD based input logic thresholds, and can add unwanted noise into the inputs, which can cause false-signals.

    2)  It also looks like the large transient could be pushed into the System GND thought the body diode(s) of the output stage of the driver too.

    3)  The cause might be hard to pin-point here... It looks likely that the GND of the gate driver is riding on a lot of noise.  This could also be shifting your GND voltage.

    4)  For more failure mode testing, measuring the impedance of a fresh device off of the board and then measuring another device off the board that you think is messed up can help guide you to where the damage is.

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    My Questions:

    a)  What kind of test is this?  Short circuit test?

    b)  What external variables are causing this behavior?

    c)  Do you have waveforms of VDD during the failure?

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    I look forward to hearing back!

    Thanks,

    Aaron Grgurich

  • Hi Aaron, 

    Thank you so much for your reply. 

    First, to answer your questions: 

    a)  What kind of test is this?  Short circuit test?

    This is a bit of a nonstandard test. We were feeding a short bursts of high duty cycle PWM into the inverter as we found that doing so produced a failure that is very similar to what we experienced before (e.g. several of the paralleled FETs blew up and the local voltage regulator failed short), in order to get information on the failure chain. (For the record, there probably wasn’t such a signal during the original failure.)

    b)  What external variables are causing this behavior?

    We haven’t established anything to be causative yet, since we have yet to replicate the gate driver glitch outside of the inverter system (as it fails). However, prior to the behavior, the voltage regulator fails and subjects the gate driver to 11V average with ~10us spikes up to about 22V. It seems like the glitches happen when the supply voltage changes over a lower voltages range. The load is one GS66508T per gate driver with 4.7 ohm pull up and pull down resistors. The signal into the gate driver is 100 cycles at 13MHz and 90% duty cycle every 10ms. 

    c)  Do you have waveforms of VDD during the failure?

    The VDD waveform was captured on a separate scope (in yellow), and I have overlaid the corresponding trace for the first glitch. 

    I believe the craziness of VDD has to do with some failure of the input supply (pink trace).



    I appreciate you bringing up body diode conduction. Now looking back at the oscillogram, it does seem that the gate is below the driver output after the pulses end. I am not sure if it is biased enough to harm anything per se. If the difference is to be trusted (probably not), there is maybe 100mA or so going out the NMOS diode. 

    Do you know what current can be sustained before latch-up is a possibility? 

    Interestingly, the gate drivers seem to still appear to work as normal after the failure of the other stuff. We haven’t done any really extensive measurements but the ones we’ve tested don’t draw excessive supply current and do replicate an input signal. 

    I will have to think a bit about the possibility of ground bounce which you mentioned. Currently we don’t really have major ground loops that I know of; everything is referenced together at the inverter region. However, within and between the inverters there are potential loops. 



    So, for the output behavior that we saw,

    Is it possible for the output to get stuck high when VDD drops too far below 4V? Or is it more likely an input signal issue? 

    Are there any potential causes for the output high other than a corresponding input signal? I know that that is a possibility but it seems quite extraordinary for the input to reach 3.3V and stay >1.6V while the measured input signal has hardly any indication of being anything other than ~0 (though there is some wobble once the current starts going). 



    I hope I was able to make my situation more clear. Let me know if there’s anything else you’d like to know, and thanks again for the help. 



    Best regards, 

    Tony

  • Tony,

    Thanks for the extra information.

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    It seems (from my understanding), that this is not our part that is failing / having issues, rather it is the voltage regulator that is pushing unreasonable noise onto the VDD of the gate driver.  On top of this, when the voltage regulator is starting to fail, or is failing, it is outputting 11V, which is far beyond what the GaN transistors can handle according to their datasheet.

    So, this is likely damaging your FETs which then fail and cascades the failure further through the system.  Also, 22V on VDD is beyond the recommended 12.6V, which can again cause damage to our driver.  I am glad to hear that our driver seems to be surviving these conditions!

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    It is hard to say how much reverse current the driver output stage can handle before damage.

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    Regarding the output behavior, the device should behave as specified in the datasheet.  (assuming proper VDD voltage is given, IN signals, etc)

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    Gate signal over/undershoot is a concern, this can be solved with Schottky diodes configured as such:

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    Maybe, see what happens when you externally supply the voltage the regulator is supposed to be supplying during the test condition. (To eliminate that variable).

    Also, it would probably be good to make sure a range of bypass capacitors are around both of these devices to mitigate the amount of noise on their rails.  (0.1uF, 1uF, and a 4.7uF for example to get a wider frequency response; using low ESR/ESL caps in small packages; 0402)

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    I hope this answers your questions and gets you closer to figuring out the issues!

    Thanks,

    Aaron Grgurich

  • Hello Aaron, 

    Yes, we are having the voltage regulator/VDD supply fail first, and that subjects the gate drivers and GaN HEMTs to stresses outside their ratings. 

    So there is no blame to TI however the LM5114 behaves. We just want to understand what is happening, since it seems like the gate driver is turning on unexpectedly, which is what then killed the HEMTs in our test, and probably in the original failure as well. (Given enough time the overvoltage would have done it, but in this case, the failure is pretty certainly caused by a high output from the gate driver, since a second paralleled inverter, which had the input signal shorted to ground, also experienced the same failure.) 

    I don't think the original images were very easy to read, so I labelled the traces here for reference. 

    At this point, the HEMT seems to at least still be operational. It is switching, as seen by the drain waveforms, and since we were measuring before and after a single 4.7 ohm gate resistor with the one we were probing, we can get an idea for the gate current, though I think there's some ground shift at the end of the labelled event, which does add uncertainty. 

    We have tried driving VDD to voltages similar to what we observed during the failure but didn't see any output glitches. And definitely we will need to change the supply design, however, at this stage we are trying to understand the failure, of which the LM5114's (to us) unexplained behavior was a major part.

    So yeah, we're looking for a good explanation for why the output of the LM5114 is going high there. Again, no problem with TI or the LM5114 but since you understand the part better, if it is the gate driver producing the glitch (which the oscillogram seems to indicate), then you'd have a better idea.

    Thanks, 

    Tony

  • Hello Tony,

    Aaron is out of the office at the moment, but should respond to your recent post within the next day.

    Regards,

  • Hi Tony,

    It seems when the VDD is oscillating (especially during the upwards part of the wave), this corresponds to the output flipping on.  Hmm, unsure here.

    Like you said, the GND bounce here may be creating false-logic; that is my guess.

    Again, we cannot guarantee behavior of the device if it is subject to conditions outside of what we specify.

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    Again, I would also make sure that there is proper bypass caps on the rail too.

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    Thanks and good luck!

    Aaron Grgurich

  • Sorry for the delay.

    We have done a few more tests on the gate drivers. It seems like there is an output pulse correlated with a rising supply voltage at around 3.8V (maybe related to the UVLO threshold?) which appears on the gate drivers that were involved in the failure, but not the ones which were “unstressed.” There also appears to be a “healing” effect as the problem, from the outside, gradually reduced as the test was repeated.

    Last Friday we talked about this issue with our partner, Lam Research, who suggested that we try to get in contact with the designer(s) of the LM5114. If that is possible, please let me know.

    Best thanks,
    Tony

  • Hello Tony,

    Aaron is out of the office at the moment, but should respond to your recent post within the next day.

    Regards,

  • Hello Tony,

    Have you measured the slew-rate of the VDD signal? High slew rates on VDD can cause the output to go high transiently. To re-create this on the bench, you can remove all of the VDD-GND capacitors and directly touch a live wire with the desired VDD voltage to the VDD pin/node. As for fixing the issue, you may have luck introducing an RC filter, rather than just bus capacitors. That may require board changes, but if you are able to put something together, you could test to see if that fixes the issue. 

    thanks,

    Alex M 

  • Hi Alexander, 

    Thanks for the suggestion. 

    The slew rate in our current test is not terribly high, maybe 0.2V/us. Additionally, we haven't been able to produce these glitches, even with higher VDD slew rates, on gate drivers that weren't stressed by the failure. It very much seems like a case of subtle damage, though the mechanism and characteristics are still unclear.

    I will try the test you mentioned as it will be useful to know how sensitive the LM5114 is to VDD slew rate before they are damaged, since we use it a lot in our designs. 

    Regards, 

    Tony

  • Hi Tony,

    Understood and thanks for the slew rate information.

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    Since the device is being subjected to voltages beyond what the datasheet says is acceptable, there is likely damage.  This damage may be subtle as you said, and allows the device to still work, but with potential minor quirks as we are experiencing here.

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    Sounds good, hopefully the tests provide some clarity here.  I think before investigating the gate driver, the power rail should be fixed first.

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    Thanks!

    Aaron Grgurich