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BQ2980: Design Review

Part Number: BQ2980

Please find the design for BQ298006. Please share feedback.

PN: IRLHM630TRPBF
MFG: Infineon
Description: Transistor, N-MOSFET, 30V, 21A, Vgs=12V, 2.7W, PQFN-8
System requirements 
Battery: Li-ion, 3.7V nominal.
current consumption max in 3.7: 9A (overcurrent setting is 14A)

Password: Adfg*

ASKC_ACTC_BATTERY_PROTECTION-protected.pdf

  • Hi Elsa,

    It seems it should work.  A few notes:

    • If the gate to BAT_GND resistors are populated the current consumption of the circuit increases since the charge pump will run more to provide current into those resistors.  They would avoid leakage to the gate and resulting FET leakage.
    • When placing a capacitor across the FETs many designers use 2 so that a single failure would not bypass the FETs.  You have a fuse for high current events. if the cap were to short.
    • If used the R449 pattern would bypass both FETs and fuse as was likely its intent.