Hi,
I am planning to build a two-stage inductive adder with each layer operating below 700 V. I am planning to use a SiC MOSFET which is a low-side FET in inductive adder configuration. Can I use ISO5852S to drive the FET in this configuration by joining the grounds at control and power side together? If not, can you suggest an available gate driver better suited for this low-side operation?
Thanks.