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ISO5852S: Can it be used as low-side driver in inductive adder circuit

Part Number: ISO5852S


Hi, 

I am planning to build a two-stage inductive adder with each layer operating below 700 V. I am planning to use a SiC MOSFET which is a low-side FET in inductive adder configuration. Can I use ISO5852S to drive the FET in this configuration by joining the grounds at control and power side together? If not, can you suggest an available gate driver better suited for this low-side operation?

Thanks.

  • Jonathan, 

    Can I use ISO5852S to drive the FET in this configuration by joining the grounds at control and power side together? If not, can you suggest an available gate driver better suited for this low-side operation?

    If you don't need the isolation, theres no problem to do that with our isolated gate drivers. 

    if this answers your question, please let me know by pressing the green button


    Best

    Dimitri