I would like to drive a GaN Half-bridge with a 12V driver, but the GaN devices can only withstand up to 6V on their gates. The UCC27611 appears to be a good level shifter for operation of a single 5V gate GaN device with a 12V gate signal. If I were to power it with a large bootstrap capacitor, are there any reasons I should NOT use this device to drive a high-side FET?