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CSD17313Q2: VGS(th) specification : 5V drive optimized?

Part Number: CSD17313Q2
Other Parts Discussed in Thread: CSD17318Q2

Team,

Can you please help with the below?

I have a question about the CSD17313Q2 mosfet (see Datasheet SLPS260E page 3).
According to the information on VGS(th), 3.0V is sufficient.
But in the features it says that the part is "5V drive optimized".
Questions:
-What does "5V drive optimized" means exactly? What would be the difference if driven at 3.0-3.3V?
-Can this Mosfet be driven with 3.0- 3.3V level without any problems ?
- If not, is there an alternative in the same housing that can do this ?

Thanks in advance,

A

  • Hello AnBer,

    Thanks for the inquiry. The MOSFET threshold voltage, VGS(th), is specified (and tested) in the datasheet at the value of VGS where ID = 250μA. The CSD17318Q2 on resistance is specified, tested and guaranteed at VGS = 3V, 4.5V and 8V. As long as you provide VGS ≥ 3V and VGS < 10V, the FET will be ON and meet the on resistance specs in the datasheet. The datasheet says optimized for 5V gate drive - this is the sweet spot where you should get the best performance. You can drive it as low as 3V with higher on resistance. Also, the abs max VGS ratings are +10V/-8V for this device and it is not compatible with 12V gate drive. Some of our FETs are only rated down to VGS = 4.5V or 6V but their abs max rating is +/-20V and are compatible with 12V gate drive. Hope this helps. Let me know if you have any questions.

    Best Regards,

    John Wallace

    TI FET Applications