• State TI Thinks Resolved
  • Locked Locked
  • Replies 8 replies
  • Answers 5 answers
  • Subscribers 63 subscribers
  • Views 743 views
  • Users 0 members are here
Support feedback
Options
Options
Related

This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

LMG3422R030: Find the comparison GaN MOSFET

Rock Shao
Expert 2995 points
Part Number: LMG3422R030
Other Parts Discussed in Thread: LMG3411R150, LMG3411R070, LMG5200

Hi Team,

My customer wants the change the SiC MOSFET to the GaN FET for a 1500W PC power supply.

Please help to find the comparison GaN component, thanks.

1500W component specification2022.06.17.xlsx

PFC

　 Main Second_01
　 1500W 1500W
Vendor INFINEON LONTEN
Part. IPW60R099P6 LSB65R099GF
VGS (static) 30V 30V
VDS Tc=25℃ 650V 650V
RDS(ON) 89mΩ(VGS=10V,Tj=25℃) 86mΩ(VGS=10V,Tj=25℃)
ID at 25C 37.9A 40A
IDM(PUISE) 109A 120A
Ciss 3330 pF 3270 pF
Qg 70 nC 66 nC
TJ -55 ~+150℃ -55 ~+150℃

PWM

　 Main Second_01
　 1500W 1500W
Vendor AOS LONTEN
Part.  AOTF29S50  LSD55R140GF
VGS (static) 30V 30V
VDS Tc=25℃ 500V 550V
RDS(ON) 150mΩ(VGS=10V,Tj=25℃) 140mΩ(VGS=10V,Tj=25℃)
ID at 25C 29A 23A
IDM(PUISE) 120A 69A
Ciss 1312 pF 2637 pF
Qg 26.6 nC 40 nC
TJ -55 ~+150℃ -55 ~+150℃
  • 0
    TI__Expert 4520 points

    Hello,

    May I have more information about the topologies used in this design? I see PFC and PWM but I'm not sure if it is boost PFC or totem pole, same with DC/DC stage.

    From an initial look, our LMG3411R070 device appears to be a potential replacement for the PFC stage and our LMG3411R150 device a good fit for DC/DC stage. We have resources for power loss calculations with various topologies I can share as well.

    Regards,

    Zach

  • 0 in reply to Zachary Soviero
    Expert 2995 points

    Hello,

    Thanks for your answer. The customer will use aUCD3138 for the totem pole in the PFC stage, and DC/DC will be used C2000 for LLC.
    Please also share the power loss calculation resources we have for various topologies, thanks.

  • 0 in reply to Rock Shao
    TI__Expert 4520 points

    Hello,

    Thank you for the update. at this time, we have a CCM Boost PFC and a Totem Pole PFC calculator. We are currently working on our LLC calculator, but it is not complete yet.

    Here is a link for our Totem Pole calculator, you can select different TI GaN FETs and set the parameters of your system:

     https://www.ti.com/lit/zip/snor030 

    Regards,

    Zach

  • 0 in reply to Zachary Soviero
    Expert 2995 points

    Hello,

    Thanks for your answer quickly. May I double-confirm the totem-pole PFC recommends the LMG2411R070 or LMG3411R070?
    Because I can't find any information about LMG2411R070 on TI.com. 


    Did you also single PFC application note can share as well?


    If my customer wants to increase the output watt to more than 2KW in the future, do you think the LMG342xR030 series is suitable?

    Regards and thanks

    Rock

  • 0 in reply to Rock Shao
    TI__Expert 4520 points

    Hello Rock,

    I apologize, I mistyped, let me take a moment to repeat myself properly.

    Our LMG3411R070 device appears to be a potential replacement for the PFC stage and our LMG3411R150 device a good fit for DC/DC stage. Both devices are LMG3411x, just with different Rdson values.

    As for a PFC application note, please give me 1 day to get back to you, I will see if we have any good references.

    For increased power more than 2 kW, I would need to know a bit more about the system before giving a recommendation. We have used our LMG34x parts in >2 kW applications; however, depending on the voltage stresses, our LMG35x parts may be a better fit, as they have higher voltage ratings. If you'd like more information, feel free to ask and I can provide it for you.

    Regards,

    Zach

  • 0 in reply to Zachary Soviero
    TI__Expert 4520 points

    Hello,

    We don't have any technical app notes related to Totem pole PFC at the moment, we have this white paper, but it might not be what you are looking for:

    https://e2e.ti.com/blogs_/b/powerhouse/posts/how-gan-enables-high-efficiency-in-totem-pole-pfc-based-power-designs-402620384 

    We may be creating an app note soon, if so I will let you know.

    Regards,

    Zach

  • 0 in reply to Zachary Soviero
    Expert 2995 points

    Hi Zach,

    Could you help to provide the following information and compression table? thanks.

    1. Please provide TI's GaN MOSFET selection comparison table
    (for example, compare the specifications of Infineon Si MOSFET, please refer to the table above for detailed part numbers)


    2. Please provide an effective Layout Guide and application precautions for our reference.


    3. Is there a high-voltage version like the half-bridge GaN MOSFET LMG5200?

  • 0 in reply to Rock Shao
    TI__Expert 4520 points

    Hello,

    I will do my best to answer your questions, but would like to preface by stating that my resources are limited so my answers may not meet all of your needs.

    1. We do not have a premade selection table for our GaN FETs, if you would like some comparison for our TI devices, feel free to ask more questions and I can provide some answers. We also do not have a direct comparison table for GaN compared to specific silicon devices, I encourage your customer to search on our website or the general web for Gallium Nitride technical papers/application notes to understand the benefits clearly. The main advantages of our GaN are lower switching losses, faster switching speeds, smallest size, reliable performance, integrated driver, and protection features. Here is an example comparing our LMG341xR070 to the IPx60r099P6 that you provided in the table above:

    On the left is the silicon part, on the right is our GaN. From the comparison you can see that our GaN offers lower capacitances and has no reverse recovery charge. Further in the datasheet you can find information on GaN's faster switching speeds with integrated driver.

    2. Every datasheet for our GaN devices (including the LMG341xR070) have a section for layout guidelines, the example mentioned has these guidelines starting on page 23 of the datasheet. 

    3. For high voltage and high power applications, we do not offer a part with that description; however, our single devices parts are set up to use in half bridge applications, and each datasheet has specific guidelines for this.

    Regards,

    Zach