• State Resolved
  • Locked Locked
  • Replies 3 replies
  • Subscribers 62 subscribers
  • Views 662 views
  • Users 0 members are here
Support feedback
Options
Options
Related

This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

LMG3422R030: SOA of GaN FET

Kazuki Itoh
Genius 11030 points
Part Number: LMG3422R030


Hi team,

Could you show me the SOA figure of LMG3422R030?

I'd appreciate if you show the SOA with various on-time duration as well as other Si FET datasheets.

Regards,

Itoh

  • 0
    TI__Expert 4520 points

    Hello Itoh,

    Our LMG3422R030 datasheet will soon be updated to include an SOA figure. For now though, you can reference our LMG352xR030 industrial datasheet found here:

    https://www.ti.com/lit/ds/symlink/lmg3522r030.pdf 

    On page 10 we have this figure listed, the two are similar enough to compare for this use-case. Please note that this is the non automotive part, just released today, so the link above is not the same as our Q1 device and will show up on the appropriate product page shortly. As for Si FETs, if you/your customer has specific Si FETs they are trying to compare I can take a look, but making that comparison in general seems obscure.

    Regards,

    Zach

  • 0 in reply to Zachary Soviero
    TI__Genius 11030 points

    Hi Zachary-san,

    Sorry for the delay.

    Please find diagram 2 and 3 in the competitor Si FET datasheet below.

    https://www.infineon.com/dgdl/Infineon-IPB60R040C7-DS-v02_00-EN.pdf#page=7

    I mean other datasheet has SOA figure with different pulse width (tp).

    I and my customer wonder why TI doesn't specify tp for the SOA.

    Best regards,

    Itoh

  • +1 in reply to Kazuki Itoh
    TI__Expert 4520 points

    Hello,

    Great question! For the safe operating area (SOA) figure of Si and SiC, the drain current is limited by the intrinsic saturation of the semiconductor material, this means that different pulse widths will produce different limitations in the FET. For GaN, this is not the case. The intrinsic properties of the GaN itself are very high as shown in figure 7-5 of the LMG3522 datasheet:

    From the figure, we see that the GaN FET does not saturate until upwards of 250 A, but the dashed blue line shows the overcurrent protection of the LMG3522 device. Our GaN FET is limited not by GaN saturation but instead by overcurrent protection features, this is why our SOA figure looks flat and different from normal Si and SiC. Therefore, the SOA does not change with different tp, it all will fall within the SOA. Please let me know if you need any further clarification on this topic.

    Regards,

    Zach