I am using SIR510DP-T1-RE3 as n channel FET with bq76200. The recommended Gate resistance as per N channel FET datasheet is 1 ohm only.
However, as per Beyond the Simple Application Schematic document, moderate resistance >100 ohm is recommended which is quite high.
I just want to confirm use of 500 ohm will cause any issue.
I am just confused with which recommendation I should follow.
Thanks in advance