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I am using SIR510DP-T1-RE3 as n channel FET with bq76200. The recommended Gate resistance as per N channel FET datasheet is 1 ohm only.
However, as per Beyond the Simple Application Schematic document, moderate resistance >100 ohm is recommended which is quite high.
I just want to confirm use of 500 ohm will cause any issue.
I am just confused with which recommendation I should follow.
Thanks in advance
Hi Monica,
The detailed guidance in the Beyond the Simple Application Schematic document is best to avoid any potential issues described in the document. This was written at a later date in the datasheet and contains many lessons learned.
Best regards,
Matt