TPS7B86-Q1: VDO of TPS7B8601QDDARQ1 when Io=100mA and 200mA

Hi Kazuya-san,

We don't have the data you requested, but from Figure 6-10 you can see that the dropout voltage does not change once VIN is greater than 4-5V, so you can take Figure 6-9 to represent the case VIN = 15V to a very good approximation.

Regards,

Nick

Hi Kazuya-san

The data in all of the Typical Characteristics plots are typical data and not max data. Since this device has a linear dropout voltage vs IOUT curve, a reasonable way to estimate the max for each point is to scale the data to a worst-case. The way I do it is to take the max dropout spec - say 535mV @IOUT=500mA - and calculate a scaling factor. Using Figure 6-9, I would estimate the scaling to be 535/470 = 1.138. Then, the max dropout at 100mA or 200mA can be found from Figure 6-9 by using the 150C curve (i.e. the worst-case dropout curve) and scaling by this factor.

Tanikawa Kazuya said:

Furthermore, although Iout=450mA in Fig. 6-10, is the rate of temperature change the same for other current values?

No, this is essentially a vertical slice of Figure 6-9 and then swept across VIN. So, you can expect the temperature variation to be lower at lower load currents as in Figure 6-9. 

Tanikawa Kazuya said:

Also, does the same trend apply to voltages above 20V in Figure 6-10? For example, is 30V the same?

Dropout is not defined above VIN = 20V because VOUT is only rated to 18V. 

Regards,

Nick