Hello, I would like to ask you about the power loss of the LMG3422R030 device.
I understand that GaN HEMT and SiFET are connected in series inside LMG3422R030.
if the switch is switched on, the current goes from the Drain to the Source.
However, referring to the data sheet, ON resistance or electrical properties for SiFET are not specified.
Can I judge that the effect of Si FET is small among the losses caused by the operation of the device?
I would appreciate it if you could tell me the reason why you don't have to consider it if it's right.
