In the document "Achieving Reverse Battery Protection Using TI High Side Switch Controllers" in Fig. 2.3 another possibility is described.
Is this another feasible solution for reverse polarity protection on the Vs pin?
We use only one ground in our design, e.g. GND = PGND. Does this make any difference in the design of the reverse polarity protection?
This is related to the pins Vs (blocking capacitor), IWRN and EN/UVLO.
