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Whats the difference?
Secondly, i want to use this for an application which requires 80V 100ms surge as part of qual testing. I understand this ideal diode not rated for this at operating, but the device has been tested at 200V load dump conditions correct?
Again understand that this is beyond abs max.
Would you be able to share any details about this testing or possibly report?
Hi,
LM74810 has higher charge pump source current (I(CAP)) and peak DGATE drive strength (I(DGATE)) over LM74800-Q1. This allows LM74810-Q1 to rectify higher frequency of AC Super imposed signal. For more understanding, please refer to Ideal Diode Controllers for Active Rectification of AC Voltage Ripple Application note.
LM748x0-Q1 in common source topology can withstand higher voltages on the power rail than Abs max rating of the device(65V). Please refer to datasheet '10.3 200-V Unsuppressed Load Dump Protection Application ' section for more understanding.
Hi Dimitri,
You can find the EN/UVLO ↓ to DGATE ↓ and EN/UVLO ↓ to HGATE ↓ delay in the datasheet 7.6 Switching Characteristics table.
