Hi experts:
For the application of ucc5871-Q1, we have some issue. As the picture showed below, When the short circuit happens, we will open the SIC-MOSFET, there will be a high voltage at Vds of MOSFET because of parasitic loop inductance induced voltage spikes. It is not proper to add absorb circuit to protect the MOSFET because of the high voltage and high current when short happens. So we need to figure out other ways to protect the MOSFET. The Bat voltage is 800V, the parasitic loop inductance is about 30uH, the resistance in loop when short happens is about 200mR.
In the DS of ucc5871-Q1, I checked that it has 2 functions to protect the external MOSFET when fault occurs, STO and 2LTOFF. Which method is better? And what factors need to consider when using these two methods?
And is DESAT function suitable for our application? Is there other methods?