Hi.
Our prototype design with BQ24296M has an EMI issue. Could you look at the design? Maybe there is something I'm missing.
Issue description:
- The design shows vast RF noise floor degradation (up to 10 dB @ 868 MHz) when supplied from the +VPSU.
- The noise floor degradation correlates with the applied +VSYS load (more current - more noise). There is no noise with a light load (<300 mA)
- The amount of noise doesn't change while replacing the +VPSU source.
- Replacing the inductor with a fully shielded one or adding the ferrite bead at +VPSU doesn't affect the noise.
- Replacing the VBUS decoupling capacitor with 1 uF makes the noise worse.
Additional information regarding this system:
- IINLIM 2.0 A
- VSYSMIN 3.5 V
- ICHG 640 mA
- Average system current w/o charging - 250-300 mA
- Peak system current w/o charging ~3.5 A (short GSM bursts)
- The 868 MHz transceiver has a 32 MHz crystal, so it may be sensitive to the noise harmonics on 64 MHz, 96 MHz, 128 MHz, etc.
The schematic:
The layout (4L PCB, SIG+PWR - GND - GND+PWR - SIG+GND):