Does TI have any application notes for GaN devices?
Does TI have any papers that explain why GaN devices from TI are not at risk of hydrogen poisoning?
Does TI have any papers explaining why on orbit atmospheric H2 or H2 will or will not enter the package by going around the package’s hermetic seal?
Does TI use a hydrogen getter in their GaN devices? How long will the getter work on orbit?
What parameters should be derated and how much for GaN devices?
