Hello,
According to the device datasheet, the maximum resistor value that should be used to program the LEB is RLEB = 300k. I calculate that this should result in LEB of approximately 255ns (not including internal logic delay).
Is it possible to get a little more information on this limitation, and what the possible outcome would be if I used a higher resistance (say 475k, to try to achieve LEB of 400ns)?
Thanks
Chad W.