Other Parts Discussed in Thread: TINA-TI
Hi Experts,
I noted the drain-to-source leakage current (in off state) is always specified at <1uA @ 80Vds, 0Vgs. I am guessing this 1uA spec is just a test criterial, instead of real leakage performance. My application is sensitive to leakage current and with much lower VDS (<10V). I am curious what is the real leakage performance at lower VDS? I did a simulation with TINA, the result shows the leakage is lower than 1nA. I am not sure if the TINA model can be used for simulation of leakage current at off state?
If the leakage is high, such as 1uA@80VDS, is it means the real leakage can dropped linearly as dropping of VDS? say is it possible for leakage dropping to 125nA @ 10VDS?
additionally, is it possible to further reduce the leakage through applying a negative VGS?
Thank you!
John
