Hi TI-Team,
I am observing a problem during double pulse tests with the driver. When I try to characterize a SiC MOSFET at certain operating points, after turn-on for the second pulse, the gate-source voltage is pulled down to turn-off voltage after approx. 100 ns. Sometimes, the driver tries to turn-on again after several hundreds of ns but fails. Since this only occurrs at operating points with high currents/voltages/temperatures I assume it is related to the di/dt and the reverse recovery peak-current. DESAT and AIN are connected to COM and CLMPI to VEE. Also, the FLT is not showing any error. Do you know what is causing the problem?
Thank you!