Hi TI team,
We are preparing use LM5176 in our new project. The operating condition is VIN=9-48V / VOUT=20V/IOUT=12A (max).
And we got a design file to simulation LM5176 system, we found that when VIN=9V and IOUT around 11A the efficiency is drop to under 75%.
We tried to modify the boost mosfet parameter, but don’t have any improvement.
Please help to review attached file and give some advice.
Let me know if you need any further clarification.