Hello,
When I am trying to compute the switching time for the gate of the MOSFET that is chosen in the application report Robust Hot Swap Design (Rev. A) (ti.com), and basing on the gate source current (20uA typ.) of LM5066I, I got 5.55ms as value of switching time (base on the MOSFET datasheet) while the calculated fault time in the application report is equal to 5.2ms!
So, my question is this logic ?! The value of gate source current (20uA typ.) is sufficient for enabling the MOSFET gate rapidly ? If no, what is the solution for this problem ?
Best regards,
Zakaria CHMEIT,