Hi,
We have previously made some queries. The case number was CS2169510. Since it was closed, I am writing my next query as follos:
To reduce the Power Loss, we are more inclined to use GAN FET. Our selected component is EPC23102ENGRT. It has a built-in driver and we have to provide the Logic Level Signal to the high-side FET too. Since we do not have a complete internal architecture of BQ25756, I assume that it can be done by connecting the SW1 and SW2 pins to ground. Will this result in a 5V signal on HIDRV1 and HIDRV2 pins with reference to the GND? GAN FET block diagram is as follows:
Also can I use BTST1 and BTST2 pins to power VDRV in the above figure? I think the potential of these pins are 5V. If yes, may I connect these after two diodes, as shown below:
Thanks and Regards
