Part Number: LM66100
I am considering the LM66100 configuration which would provide reverse current blocking from the datasheet:
The device turns ON when VCE is approximately 250mV BELOW Vin (VIN - VCE > 250mV)
Doesn't this mean that when using the reverse current blocking configuration, Vout will be 250mV BELOW Vin, and therefore the internal PFET is actually operating in the linear region?
If my understanding is correct, there will be additional losses when using this configuration and we will not achieve the ideal diode behavior.