LM5050-1: Oring MOS Section

Francis Jiang

Part Number: LM5050-1

Hi Team,

When customer asks for Oring MOS, there are 3 questions here:

What's the difference between -1 and -2? Seems the only difference is the charge pump position.

2. What's the key technical point between high-side and low-side? Seems high-side device's voltage stress is positive, and low-side device's voltage stress is negative, right?

3. What's the difference between Hot Swap and Oring MOS? Whether the Hot Swap integrates more function into basic Oring MOS?

over 1 year ago

+1 Shiven Dhir over 1 year ago

TI__Mastermind 46170 points

Hi Francis,

Please find my comments below.

In 1 and 2 difference is in how the controller takes power for internal circuits. in 1 it takes power from VS whereas in 2 it takes from IN
The understanding is correct, in low side, the FET is placed in reverse path whereas in high side, the FET is placed in forward path.
HOTSWAP Fets are blocking FETs whereas OR-ing Fets are reverse path blocking FETS which means you get always ON VOUT.

Regards,

Shiven Dhir

0 Francis Jiang over 1 year ago in reply to Shiven Dhir

TI__Expert 3160 points

Hi Shiven,

Got it, thanks for your prompt reply.

Two further questions here:

What are the advantages of each of these 2 structure?

Shiven Dhir said:
In 1 and 2 difference is in how the controller takes power for internal circuits. in 1 it takes power from VS whereas in 2 it takes from IN

What's the technology differences between these two type devices? Just the voltage stress is different? Is there any other differences?

Shiven Dhir said:
The understanding is correct, in low side, the FET is placed in reverse path whereas in high side, the FET is placed in forward path.

Thanks.

BRs,

Francis

+1 Shiven Dhir over 1 year ago in reply to Francis Jiang

TI__Mastermind 46170 points

Hi francis,

1.One provides flexibility of using external supply voltage (VS) but had leakage issue. To solve that 2nd structure is used.

(+) [FAQ] LM5050-1: LM5050-1 Leakage Current - Power management forum - Power management - TI E2E support forums

2.There are no technology differences.

Regards,

Shiven Dhir