Hi TI Team,
i use the TPS48111LQDGXRQ1 in my design. I use the pre charge feature according the schematic in data sheet, page 33. Both, precharge supply and Vbatt are the source. Should'nt be a problem i think.
Well after applying the Vbat to the system i developed i little logic, that first, for 327ms, controls the INP-G pin to be high and the INP pin to be low at that time. After that the logic levels are vice versa in the way that INP is high now, while INP-G is low.
In my opinion during precharge the gate called G should be "high" while the gate PU/PD should be "low". Please have a look at the scope screenshot.
Here you can see yellow is gate PU/PD, green is gate G, data D0 is the control pin INP-G and D1 the one for INP. Vbat =18V.
As you can see during the time where D0 (INP-G) is high (12V over Vbat) the precharge gate G controls Q3 (in your example) conductive. But what happens to the gate INP at the same time? It looks like it follows the gate INP-G during precharge.
After precharge has stopped by D0 low D1 (INP) is high and you can see the gate control PU/PD with round about 12V above Vbat=18V. Normal? I think it could be this way, but i'm not sure.
Second aspect is turn on under load condition. The TPS48111 could turn on Vout with a load current up to 2.4A. I give you the file of calculation tool. What do i have to do turning on with load current up to 5A?
Thanks for help and kind regards