• State Resolved
  • Locked Locked
  • Replies 1 reply
  • Subscribers 64 subscribers
  • Views 913 views
  • Users 0 members are here
Support feedback
Options
Options
Similar topics

This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

Inrush current limiting using MOSFET on bq2410x/11x/12x -need Current regulation limits and topology in APP Note explained.

vikram_u
Prodigy 40 points
Other Parts Discussed in Thread: BQ24600, BQ24170, BQ24133

As per slua376.pdf (http://focus.ti.com/general/docs/lit/getliterature.tsp?literatureNumber=slua376&fileType=pdf),

 

the topology 3 describes the Q1/Q2 MOSFET's to limit inrush current?. are there any literature/documentation available on how to model them?.  

 

 Primarily we would need to understand the benefits of removing the Mosfets at different current levels( line regulation and current limiting when load Vin is High). Could Q1 be removed and what is the minimul current by which current ringing starts to affect the load?. Should Q2 be removed since the Battery acts like a large capacitor(Li-ion)?.

  • 0
    TI__Guru 56650 points

    Q1 is for a reverse blocking circuit. It blocks the reverse current from battery to input source.

    Q2 is for an inrush current control circuit. The battery is not connectted to the system directly. The inrush current is decide by the Q2 turn-on speed, system cap; system load...

    If you want to use /PG to control the Q1, Q2 and Q3, the bq24600 EVM gives a good example.

    Also, bq24170 and bq24133 are integrated the gate driver for Q1, Q2 and Q3.