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LM2621: Root Cause for burn marks above pin 7/8

Part Number: LM2621


Tool/software:

We are using the LM2621 to boost a "9V" battery to 12V to power an MCU and a electro-mechanical lock.  The MCU controls a high side switch to power the electro-mechanical lock.  A flyback diode protects the high side switch (and boost) from the electro-mechanical lock as it may be a solenoid based locking mechanism.  Additionally, a 3A fuse is between the boost circuit and the mcu/lock load.

This circuit works fine for most locks but we recently tested against a lock that consumes 1.2A max and 200mA at typical idle.  After powering/controlling the lock the LM2621 no longer boosts the input voltage to 12V (input voltage is passed through with the expected diode drop).  This has been reproduced on 2 separate devices.

A visual inspection of the LM2621 in one of the failed devices shows a burn mark above/near pin 7 and pin 8:

From the picture, is it possible to determine what failed on the LM2621?  What part of the chip is under the burn location?

The 3A fuse protecting the load is not getting tripped.

Pin 7 (boot) (in addition to EN and VDD) are limited by a 4.7V Zener and are powered from the input voltage so I don't think pin 7 was subjected to over-voltage.

Pin 8 (sw) - There is no evidence that the LM261 output was shorted to ground.  The LM2621's internal current limit should have protected the chip if an in-rush current current occurred.  Additionally, I would have expected the thermal protection to kick in case of too much current flow through the internal mosfet.

Any thoughts on what is going wrong?

  • Hi Konrad,

    Could you provide the schematic? I'd like to check how the Zener diode is connected at the boot pin.

    It's hard to determine what part of the chip damaged under the burn mark although it's near the SW/boot pin. 

    For further check, could you check the following items:

    1. What's the impedance or resistance between the SW and GND for the damaged device?
    2. Could you re-generate the damage issue with the Vout be monitored? I'd like to check whether the Vout is pulled down below Vin;  
      1. If the Vout is pulled down below Vin, the inductor current will increase without control, the peak current limit take no effect for no matter the low-side FET is on or off, the inductor current increases.

    Regards

    Lei

  • Hey,

    Here's the schematic:

    1.) 1K ohm was measured between SW and GND on a destroyed unit.

    2.) Working on this; I have a sample of the electro-mechanical lock on order.  Trying to simulate the lock with a dynamic load has not reproduced the issue.  Even shorting the output of the boost to GND doesn't reproduce the issue.

  • Hi Konrad,

    I'll check and give you the feedback early next week.

    Regards

    Lei

  • I have now tested with the electro-mechanical lock and I'm unable to reproduce the issue with the lock.

    I have found that if I over-voltage the circuit I can reproduce what appears to be a similar failure.  Nothing is connected to the circuit output at the time of the failure

    By apply 22V the LM2621 looks like:

    At 24V

  • Is this the expected failure response for over-voltage condition?

  • Hi Konrad,

    Could you send me the layout? I'd like to check whether the main power path from SW pin --> diode --> Cout(Vout) --> Cout(GND) --> GND pin is too long.

    And also, could you help measure the SW voltage on LM2621 that works normally? Please make sure the bandwidth of the voltage probe is high enough, such as > 250MHz.

    Regards

    Lei

  • Here's a rendered picture of the PCBA

  • SW pin captures:

    Min. Incoming voltage (7V) and Max outgoing current (~1A):

    typical (9V in and ~12V/0.6A out):

  • Hi Konrad,

    Thank you for providing the information.

    As my check, although I'm not quite sure the path from the C5 GND to chip PGND pin in your layout, the main path from SW pin --> diode --> Cout(Vout) --> Cout(GND) --> PGND pin is quite long. So the parasitic inductance in this path is relatively big, in tens or even hundreds of nH. This big parasitic inductance will cause high SW spike in each switching cycle in steady state. 

    In you provided SW waveforms (typical condition), we can see that the max SW spike is very close to the abs max of 14.5V. I guess the bandwidth of the oscilloscope you used is low, the high and fast spike may not be captured. So the actual conditions can be more worse. This should be the most possible reason that cause the damage. 

    You can refer to the layout concept in datasheet for optimization.

    Another check point is that when powering/controlling the lock, whether there will be conditions of the Vout shorted to GND even for a very short duration. The current limit and thermal protection won't take effect when the Vout is shorted to GND.

    Just let me know if you see any concerns or have updates.

    Regards

    Lei

  • Thanks for the info!  I'll keep that gnd path shorter in future designs