Other Parts Discussed in Thread: UCC21750
Tool/software:
I have designed the gate driver using ISO5451 attached is the schematic for 1 channel.
Please clarify my following queries.
VCE-FAULT(TH) as per datasheet is as follows. |
VCE-FAULT(TH) = 9 V – n × VF (where n is the number of DESAT diodes). |
But my requirement for VCE-FAULT(TH) is 3.6V |
So I have connected 1 nos STTH112A diode and 1 Nos BZT52C4V3-7-F 4.3V zener |
with the above mentioned components my equation becomes |
VCE-FAULT(TH) = 9 V – 1.1(Diode)-4.3(Zener)=3.6V |
Is this correct? |
For increasing the gate driver sink and source currents I have used booster transistors |
PHPT60410PYX and PHPT60410NYX |
My VCC2 and VEE2 is +15V and -8V respectively. |
And gate resistor is 3.4 Ohms. |
My operating PWM frequency is 4 Khz. |
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I will be using the gate driver circuit to run SKM200GB12T4 and SKM400GB12T4 IGBTs |
Please suggest if any changes are required. |