Hi,
To test the reaction of bq20z45 to a short circuit, Pack(+) and Pack(-) nodes are momentarily shorted together.
This causes the Gate of Discharge FET(DSG) to go "LOW", opening the FET. In few cases the Discharge FET was damaged.
Are there alternative ways for such tests? Do TI recommend a safer way for the test?
All comments are welcome!
Thank you,
RK
