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CSD85302L: about the issue of G and S polarity short circuits

Part Number: CSD85302L


Tool/software:

Hi 

We have a customer return battery; During testing, it was found that Q1 was damaged, and G、S measured 43.47 Ω; Can you help analyze if there are any issues with the schematic diagram?Or possible causes

Best Regards,

  • Hello Alex,

    Thanks for the inquiry. The schematic looks OK to me. The customer may want to consider pull down resistors from gate-to-source to ensure the FETs in this device are off if the gate signals are floating. However, I do not see pull down resistors in the typical application schematic for the battery gas gauge. Please be very careful when probing this device. It is a chip scale LGA device (silicon chip with solderable pads). There is no plastic package and metal probes can easily chip the device.  Is this a new design or mass production? Where did the failure occur? What is the failure rate?

    Best Regards,

    John Wallace

    TI FET Applications

  • Hi John

         Mass production stage; On the user side; The current failure rate is 0.01%.

    Best Regards,

  • Alex,

    John is out of the office today and will look into this when he returns tomorrow

    Chris...

  • HI Alex,

    Can you please confirm the requirements: Vbat, Vsys, max charge and discharge current. What were the conditions when the failure occurred?

    Thanks,

    John

  • Hi Alex,

    Following up to see if you have been able to get additional application information. Please let me know.

    Thanks,

    John

  • Hi John 

    Thank you very much for your reply;

    max Vbat 4.5V, max Vsys 5.0V, max charge and discharge current 100mA;

    It was discovered on the user side; What did the user do to the product? We are still searching.I'm thinking it could be caused by ESD.

    Thanks,

    Alex

  • Hi Alex,

    Thanks for the update. The CSD85302L should work well under these conditions. The conduction loss in the FETs will be minimal with only 100mA of current. This device does have back-to-back gate ESD protection structure and passed 2750V HBM & 1250V CDM ESD testing. I believe the failed unit has been returned for FA.We'll wait to see the results.

    Thanks,

    John