Other Parts Discussed in Thread: TPSI3052
Tool/software:
Hi,
I'm using the TPSI3052-Q1 in my design in two instances:
1. as a driver to a high side SiC MOSFET in a similar application as the colleague complaining about the CE noise in the post: TPSI3052-Q1: EMC Issue advice - Power management forum - Power management - TI E2E support forums
2. as am isolated charge pump power supply for a sensor circuit.
We noticed significant peaks in the 80-100MHz range during radiated emission testing and 370-360MHz, 500-600MHz and 720-760MHz range. We have confirmed that the emission is coming from the TPSI3052 devices. We did this by testing the ECUs with and without the TPSI3052 mounted as well using nearfield probes at least in the 90-10MH range.
The source of the noise seem to be the middle of the IC in both position, between the pin4 and 5 of the TPSI3052. We use both circuits in a 3-wire connection. Interestingly the noise becomes lower once the Enable is pulled high activating the VDRV.
Schematic of the circuits:
Both circuits sit inside the board far from the feeding cable connection however the SiC source is connected to a high voltage battery output through the PTCs and the ECU has a plastic enclosure with only one side of it being closed up with a metal plate.
Any idea how to improve the RE performance?
Thanks in advance
