Tool/software:
Hello,
LM74502-Q1, OV pin used as EN pin with PWM signal to regulate Inrush current, but the FET is getting damaged.
As per the formula on data sheet (see image below).The Cdv/dt = 21 nF, placed is 22 nF.
IGate = 60 @µA (typical, max is 77 µA), Cout = 1.75 mF, Iinrush = 5A (Average) but FET (Infineon IAUC120N06S5L022) is destroyed at higher temperature which is connected to MOSFET driver as the RDS(On) is 3.3 Ohm @85°C in comparison to 2.7 @ 25°C and Ptot is 136 W @ 25°C in comparison to 80 °C @ 85°C.
I have following questions, we have used RG as 1k Ohm for our design (see attachment) , is it OK ?
What role does RG play. How can i design the RC combination for high temperature performance?
The Cout typical value is 220uF in datasheet. What will happen if the Cout = 1.75mF, as we need that?
The measurement is as below:
OV pin is kind of used as EN pin and through PWM (Turquoise color signal in Image below)
FET (IAUC120N06S5L022) gradually opened ( Voltage: dark: Blue, Current: Green), , so that the inrush current is not so high.
Thank you in advance for your response and time.
