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CSD23280F3: Drain-to-source leakage current above 25°C

Fred Arnold
Intellectual 680 points
Part Number: CSD23280F3
Other Parts Discussed in Thread: CSD25480F3,

Tool/software:

Hi,

We plan to use this device as a power switch in a battery operated device which is used in at temperatures up to 60°C.

It would be very helpful to know how the expected IDSS and IGSS would be at this temperature at VDS and VGS = –3V.

We are also considering optional using the CSD25480F3 as I would expect the leakage will be lower at 3V as it is designed for higher voltages.

Info: I do not need an ESD Diode in the PFET and I am only switching maximum 3mA.

Are there any estimates or measurements of the leakage at elevated temperatures available to assist in the decision?

Is there a better suitable PFET available?

Thanks

Fred

  • 0
    TI__Expert 7905 points

    Fred,

    Firstly, thanks for considering our device, we truly appreciate it.

    I would not recommend a different Pch FET, this is the smallest lowest cost device would could offer. As a side , this device as a fairly unique ESD protection diode, it is single ended and has exceptionally good leakage properties unlike most back to back ESD diodes. In the link below there is an article in section 4 talking about "What type of ESD protection does your MOSFET include", you may find this interesting to look at

    As for estimated on how devices vary under different conditions not in the datasheet, we have written several articles on this that you may find useful.

    In this application note here: https://www.ti.com/lit/an/slvafg3f/slvafg3f.pdf

    It lists all MOSFET technical content in one document for your reference. In section 4 there is 2 articles called "whats not in the MOSFET datasheet....." one looks at voltage variations, the other at temperature variations.

    As for temperature variations: the article above shows how MOSFETs vary with temperature and the normalized curves could be applied to this device to give you and indication. We can not guarantee but gives you a good indication, from it you will see there is about a 10x increase in Idss and Igss remains about flat @ 60degC. Using fig 4 and 5

    As for the voltage, this actually uses a 20V Pch device with a single ended ESD diode so very similar to the device you are looking at. See fig 3 and fig 6, I am not sure of the Vds you are using but the Vgs of 3V would show ~10x decrease in Igss from Fig 3b. If you are using a Vds of say around 5V then the Idss would also reduce by about 10x.

    I hope you find this information useful and let us know if you need any more information.

    Many thanks

    Chris

  • 0 in reply to Chris Bull
    TI__Expert 7905 points

    Fred,

    Let me correct something here, I see you are using a 12V FET, so the reduction in leakages with voltage will not be quite as much as I stated above. Apologies for that.

    I would estimate with a Vgs of 3V would be ~5x decrease in Igss not 10x and a Vds of 5V would result in ~7x Idss reduction.

    Chris

  • 0 in reply to Chris Bull
    Intellectual 680 points

    Hi Chris,

    Thank you for the detailed information which is very helpful.

    I assume the estimates apply to the CSD25480F3 that has Vds -20V and Vgs -12V.

    Thanks

    Fred

  • +1 in reply to Fred Arnold
    TI__Expert 7905 points

    Fred,

    The second reply gave you the estimates for the 12V CSD23280F3, it is not quite as much as the voltages you chose are closer to the Vgs max and Vds max, you could use the CSD25480F3 in your application is leakage your biggest concern and you will get the 10x improvements I mentioned.

    The CSD25480F3 is the same price as the CSD23280F3, will easily handle your current requirements and lower leakage , so this may be your choice to use given desire for lowest leakage I assume.

    Thanks

    Chris