• State TI Thinks Resolved
  • Locked Locked
  • Replies 3 replies
  • Answers 2 answers
  • Subscribers 64 subscribers
  • Views 145 views
  • Users 0 members are here
Support feedback
Options
Options
Similar topics

This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

CSD13380F3: CSD13380F3

Sandeep Kumar
Prodigy 65 points
Part Number: CSD13380F3

Tool/software:

Hi,

I am planning to use CSD13380F3 part for my BMS cell balancing application.

In the datasheet there is no mention about the gate resistor value, which is shown in the datasheet.

Please help in providing that detail so that I can complete my design.

Thank you

Regards.

  • 0
    TI__Mastermind 35660 points

    Hello Sandeep,

    Thanks for your interest in TI FETs. The typical internal gate resistance, RG = 16Ω as specified in the Electrical Characteristics in the datasheet. Please let me know if you have any additional questions.

    Best Regards,

    John Wallace

    TI FET Applications

  • 0 in reply to John Wallace1
    Prodigy 65 points

    Hi John,

    Just want to know whether I need to add any extra resistor for my application.

    We are at the final stage so just wanted to get the confirmation.

    Thank you

  • 0 in reply to Sandeep Kumar
    TI__Mastermind 35660 points

    Hi Sandeep,

    You can add an external gate resistor and just populate with 0 ohms if not needed. This FET has single-ended gate-to-source ESD protection diode. If there is any possibility that the gate voltage < source voltage, the diode can be forward biased. An external gate resistor will limit the current thru the ESD diode. Please see article on ESD protection included in TI FETs at the link below. Let me know if you have any questions.

    https://www.ti.com/lit/pdf/sszt291

    Thanks,

    John