CSD25501F3: Low leakage current of MOSFET

Hello Mahfoud,

Thanks for your interest in TI FETs. Please see technical articles at the links below. The first explains the different types of gate ESD protection used in TI FETs. The second and third articles go thru temperature and voltage dependencies of MOSFET parameters not included in the datasheet. TI FETs with single-ended gate ESD protection typically have the lowest leakage. Those with back-to-back gate ESD protection have the highest leakage. FETs with no gate ESD protection are typically low leakage. You mention VDS but not VGS. What is the gate drive voltage?

The CSD25501F3 is a -20V PFET with a -20V rated gate structure with single-ended ESD protection in a LGA (chip scale) package. This device is unique in that it has a gate clamp resistor which works with the gate ESD diode to clamp the internal VGS at -6V. However, as the magnitude of VGS increases in the negative polarity, IGSS increases as the ESD diode acts like a zener and starts to conduct current. The max IGSS < 50nA for VGS = -6V but the max IGSS increases to 1mA at VGS = -16V. This device is a good choice if the magnitude of VGS < 6V in the negative polarity. 

The CSD25310Q2 is a -20V PFET with a +/-8V rated gate with no ESD protection in a 2x2mm SON package. This is a higher cost device with higher leakage vs. the CSD25501F3.

A good alternative may be the CSD25485F5, -20V PFET with -12V gate rating and single-ended ESD protection. If you can work with higher on resistance, then the CSD25480F3 -20V PFET with -12V gate and single-ended gate ESD protection might be a good choice. TI does not provide leakage vs. VDS and VGS curves in the datasheet. If there is a particular FET you would like to use, we may have data collected during product development. Please review and let me know if you have questions or if I can provide additional information. 

Gate ESD protection: https://www.ti.com/lit/pdf/sszt291

Temperature dependency: https://www.ti.com/lit/ta/sszt206/sszt206.pdf

Voltage dependency: https://www.ti.com/lit/pdf/sszt144

Best Regards,

John Wallace

Hello,

Thank you for your quick response,

Regarding the leakage currents I am interested in, it is when the MOSFETs are in the blocked state.

The MOSFET CSD25485F5 could also be suitable for our application. I would appreciate having your data collected during product development  for the three MOSFETs: CSD25485F5, CSD25310Q2, and CSD25501F3.

And thank you for your help

Best Regards,

Hi Mahfoud,

Thanks for the update. Can you also tell me the operating temperature range? I cannot provide the actual characterization data without an NDA. However, I can provide some information such as normalized curves and average values.

Thanks,

John

Hi John,

Thank you for your message.

The operating temperature range is from -40°C to +70°C. In the meantime, I would appreciate it if you could provide the normalized curves and average values. We will coordinate with our purchasing department for the NDA process.

Thanks again for your assistance.

Best regards

Mahfoud,

John is out until Tuesday, he will get back to you when he returns.

In the mean time you could use the normalized curves in the link John sent in his first email

Thanks

Chris Bull