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CSD19538Q3A: IC information inquiry

Boyan Lu
Expert 7005 points
Part Number: CSD19538Q3A

Tool/software:

Hi Team

As shown in the figure below, CSD19538Q3A SPEC only provides the change of RDS(on) to VGS when ID = 5A.

However, since the customer is applying this MOSFET to TI PoE solution, the maximum current value does not exceed 1A.
I would like to ask you to help provide the RDS(on) vs. VGS characteristic curve of the MOSFET CSD19538Q3A when ID = 1A.
If you have other temperature curves, please provide them to me. This information is very important to customers.

Thanks,

Boyan

  • 0
    TI__Mastermind 38190 points

    Hello Boyan,

    Thanks for the inquiry. Unfortunately, we don't have any RDS(on) vs. VGS data at other values of ID. From what I have seen, RDS(on) is relatively flat with ID. There can be some increase of RDS(on) at higher ID due to self-heating of the device since RDS(on) increases with temperature. For the curves in the datasheet, a pulsed current is used in this test to minimize the effect of self-heating. Also, VDS increases as ID increases until the FET is no longer operating in the linear (constant resistance) region and moves into the saturation (ID no longer increases as VDS increases). You can see this in Figure 2 saturation characteristics. At low VDS/IDS values, the curves are nearly linear but at higher values, the curves begin to flatten out. Why is the customer requesting this information? TI only guarantees  RDS(on) as specified at the conditions in the datasheet and tested in production. There should not be a significant reduction in RDS(on) at 1A vs. 5A. Keep in mind, that all TI 80V/100V FETs require VGS ≥ 6V. RDS(on) is not guaranteed or tested at lower values of VGS. Please contact me via regular if there are any additional questions.

    Best Regards,

    John Wallace

    TI FET Applications