TPS22916: Power Consumption between discrete MOSFET and TPS22916

Hi Hayashi-san,

Hideki Hayashi1 said:

would like to know how to compare power consumption between a discrete load switch circuit with MOSFET and a load switch.

For the integrated solution, we can see some parameters like I_q and I_sd for the device. For hot-swap (external FET), we have similar value in the datasheet (input current when device enabled) but that will be just the current taken by the controller. The leakage current due to FET needs to be added and that will depend on the FET selection

Is there any specific scenario in which you want to compare the power requirement between these solution?

Best Regards,
Arush

Hi Arush,

Because I wanted to promote TPS22916 to low-power application with its low Iq feature, where customer uses discrete load switch. But I am not sure the discrete solution consume how much.

During the gate is off, the power consumption will be....

Drain-to-source leakage current (nA or uA) * Vds in discrete, correct? Does the pch MOSFET and resistor tied to VIN have few contribution for power consumption?

VIN Quiescent current (IQ_VIN) * VIN in TPS22916, correct?

Regards,

Hayashi

Hi Hayashi-san,

I apologies for the delayed response.

The key advantage between the discrete load switch and the TPS22916 will be integration. The Iq is very similar as in case of discrete implementation, power consumption will be very less (mostly due to FET leakages which will depend on the FET they select to use but will be in nA range).

The key advantages of integration is single ic solution compared to using two FETs. So there will be some space advantage. overall design effort also reduces when using integrated solution. 

Best Regards,
Arush