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CSD18533KCS: Field Failure of TI Mosfet

Norbert Jarosch
Prodigy 10 points
Part Number: CSD18533KCS

Tool/software:

I need help with issues my customer is having with product using your product number CSD18533KCS (TRANSISTOR,MOSFET).  We realized numerous returns where we had to replace this component, therefore in an effort to get to the root cause we sent defective components and one never used component to a third party lab for failure analysis.  The conclusion was that the devices failed due to electrical breakdown at the source wire bonds to the die.  The breakdown was likely the result of die damage, i.e. bond cratering, due to the size of the source bond wires.  The lab also noted that the control sample (New, never used component) showed different bond orientation, which suggests there was a design change at some point in time that may have been made to correct the problem by spreading the bonding load diagonal across the source contacts rather than parallel.

I need to know when the design change was implemented and the reason for the change.

Please provide these answers as soon as possible as we have a customer needing answers.

Thank you in advance for your help in this matter.

Norbert Jarosch

Quality Manager

  • 0
    TI__Mastermind 37950 points

    Hello Norbert,

    Thanks for the inquiry. For this issue, please contact the TI quality organization at the link below to return devices to TI for failure analysis. Normally, TI does not accept 3rd party failure analysis. This FET is assembled at 2 different manufacturing locations and both should have the same wirebond orientation. Please let me know if you have any questions.

    http://www.ti.com/support-quality/additional-information/customer-returns.html

    Best Regards,

    John Wallace

    TI FET Applications

  • 0 in reply to John Wallace1
    TI__Mastermind 37950 points

    Hello Norbert,

    Following up on this issue. We checked with the two subcons that assemble these devices and there has been no change in process. One subcon does diagonal wire bonding and the other does perpendicular wire bonding. Both methods are correct from an assembly standpoint. Please continue to work with the TI quality organization to help resolve this issue and if necessary, return devices to TI for failure analysis. Are you able to share the third party FA report? If so, can you please send it to me in a private message. I will send you a friend request.

    Thanks,

    John