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CSD19534Q5A: CSD19534Q5A:

Murugavel S
Prodigy 115 points
Part Number: CSD19534Q5A

Tool/software:

Hi,

We are designing a Bipolar switch using the TI MOSFET for one of the product enhancements. We have seen a reference design in Cybernet and need to understand the impact of the resistor and capacitor in the circuit below. We are planning to keep the similar circuit as below

  • +1
    TI__Mastermind 38090 points

    Hello Murugavel,

    Thanks for your interest in TI FETs. The resistor from gate-to-source of the FET appears to be a pull down to ensure VGS ≈ 0V if the signal driving the gate is left floating. The capacitor from gate-to-source slows down switching of the FET. For this application, you will need a higher voltage FET as the peak of 230VAC is 325V. I would consider using a 400V FET for this application. Unfortunately, TI N-channel FETs only go to 100V max. We do not have any FETs with higher breakdown voltage. Please let me know if you have any questions.

    Best Regards,

    John Wallace

    TI FET Applications