Tool/software:
I am looking to use this IC as a gate driver for a high voltage synchronous boost converter. This means that I am looking to take advantage of the datasheet rated 451VDC working voltage isolation between input and output on the high-side gate drive. I noticed, however, that on the datasheet, it fails to mention any sort of metrics that describe the isolation between output channel to output channel. Thus if in my synchronous boost converter the high-side drive is 451VDC above the low side gate drive circuit, will the circuit maintain the same level of isolation from output channel to output channel or is this voltage only guaranteed for input to output isolation.
If the isolation ratings from the datasheet only apply to input-to-output isolation characteristics, could someone provide test data for voltage isolation between outputs?
